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% v! \; X8 m# E- W3 S*PMEG3050EP, P B! Y8 k4 s8 N0 Q* j, w$ Y
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*NXP Semiconductors1 Q0 @: I) }- a! Z. t
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/ f4 I/ h: q$ X, b) G9 ^$ a*MEGA Schottky barrier rectifiers8 l$ D3 P. {% n/ A
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*IFSM = 70A @ tp = 8ms+ c4 [6 O+ @, o1 h5 D
*VF = 360mV @ IF = 5A3 T, e9 q% V% s% V; D
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) l5 D, y: k: B+ C( r*Package pinning does not match Spice model pinning.
; V5 l$ J0 o8 r6 f/ |- }/ S*Package: SOD1287 z4 q- {7 g4 a1 F7 V; i
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6 D* i2 W! Y3 x' f0 _0 k: }) P8 U1 I*Package Pin 1: Cathode . C5 r' `/ J2 _" w& C
*Package Pin 2: Anode * J3 _3 L0 K1 w5 k9 M8 X4 a
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*Simulator: SPICE2$ Z# [1 `- {3 @; u0 r
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.SUBCKT PMEG3050EP 1 2
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! a8 a7 t7 i3 p4 ^0 _) w. b* The resistor R1 does not reflect
9 h7 T: w( I7 j9 u* a physical device. Instead it6 X1 x) `+ Q4 u8 M2 D% ~9 Q; R
* improves modeling in the reverse
/ @7 F, n/ n3 @0 c( |, `4 D+ b* mode of operation.
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% G7 u" n8 C* W. v# u% zR1 1 2 4.936E+7 ( I0 ^& e3 p& J \& R2 b% @% G' _4 g
D1 1 2 PMEG3050EP - S; R7 T8 P/ i+ M) l
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.MODEL PMEG3050EP D
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8 h/ D m- [$ l$ w9 q2 g1 X+ IS = 0.0001624
$ Y ?' h; N; q1 C, U# I$ F. ]' f8 ?+ N = 1.012 d) X' ]6 p& d
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+ BV = 33 ( o h: X$ Z; Y) E- O
+ IBV = 0.027 O) l* R U4 j+ T! ?* N
+ RS = 0.00798 : a8 F; c. t1 w- h8 I' B6 E3 k: q
+ CJO = 1.496E-009
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3 l/ w6 [8 v3 p6 l) s+ VJ = 0.3243 $ L& Y7 h! y" T2 R$ `
+ M = 0.503 1 J1 D% u3 c% r. L, U' U
9 g) {# v4 X' v7 K6 ^3 G3 i; v+ FC = 0.5
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' o7 O0 k( M8 g1 |3 h9 h. s" d% m& @+ TT = 0 0 M! s. a, G T% L$ d
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+ EG = 0.69 ) l9 m3 q& @4 m3 `) A
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+ XTI = 2 + ~3 B" ~7 ^. I
.ENDS
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Q+ k0 e. O' Z7 q, ]6 q B8 l# Z这是NXP官网上PMEG3050EP.prm的spice模型
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这是仿真电路5 G; N4 p9 o5 y9 i# f
这个是仿真结果0 N% u% ?, D. r$ j" m$ k
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这是datasheet上的图示
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PMEG3050EP.pdf
(148.8 KB, 下载次数: 3)
这是datasheet
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PMEG3050EP.zip
(40.97 KB, 下载次数: 11)
这是官网上spice-model
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NXP官网上的模型,仿真与datasheet上不一致,请大家指点一下( L9 a, o2 I% J( U$ Z, d# r
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