& j# h$ [ a. [0 |是的,官方推荐图里面也是驱动双NMOSFET。9 F' E, u% ?: y
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.4 c( n3 r0 e0 h( P$ t
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其次,楼主的原理图的/SD引脚错误的接到GND了,应该接高电平。0 j- n( x2 \9 q* X