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網絡上找到的
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* lm386 subcircuit model follows:, c' w: Z/ A- c! I
, m! x* {- j! e! ~, ]: R, @) ]6 U( t************************************original* IC pins: 2 3 7 1 8 5 6 4
5 m; _( y% ]- X L7 _% ^5 S) l* IC pins: 1 2 3 4 5 6 7 8: R3 h' w8 }0 z- C/ Z b3 _
* | | | | | | | |( F" `3 e7 K9 b5 I" M& I
.subckt lm386 g1 inn inp gnd out vs byp g8
, ^! V- r9 h2 U- l************************************original*.subckt lm386 inn inp byp g1 g8 out vs gnd
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6 u% `) S2 g* t* input emitter-follower buffers:
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1 B- Y1 q$ O' }) J; X: X/ dq1 gnd inn 10011 ddpnp0 j0 ?7 g/ S. f4 n$ K: D8 [# i
r1 inn gnd 50k
. x% E/ o0 S2 ~7 `8 G. @& w/ eq2 gnd inp 10012 ddpnp- v( u6 f' T: U" T
r2 inp gnd 50k
) c. F( t1 f# v 4 s- x2 U+ U0 t7 u% L) r) E5 I
* differential input stage, gain-setting! s1 W) F3 n) I. e$ i9 V
* resistors, and internal feedback resistor:
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" j# W$ B- b0 e X7 ]3 lq3 10013 10011 10008 ddpnp" @ W. _4 d- x9 T1 S
q4 10014 10012 g1 ddpnp9 [0 V# a" o9 f$ s( o
r3 vs byp 15k
3 ~( v( q; c% X- Pr4 byp 10008 15k* O1 B Q$ N' R
r5 10008 g8 150) ~5 q. q2 v% |
r6 g8 g1 1.35k( P: U: b9 H. ]. G0 ]7 ]
r7 g1 out 15k/ ?& l* N& ^* K* q, F
- V$ P% N2 p, e. g* input stage current mirror:
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* `9 o8 j; ~5 |6 S6 A0 x3 l5 _q5 10013 10013 gnd ddnpn
& L$ ]* H2 m/ k s6 i4 Qq6 10014 10013 gnd ddnpn
: U; Z- G- F' T& D g/ B6 H 5 T6 }. H0 @* x3 l
* voltage gain stage & rolloff cap:
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q7 10017 10014 gnd ddnpn% f& L! H( a0 U6 F1 Y
c1 10014 10017 15pf x2 Q3 s4 j2 s' z" `4 C( e( i: p
^: s/ _1 D* a" v0 K" @5 M4 Z! J* current mirror source for gain stage:3 P1 g8 t+ W/ s, W) C; Z8 m
5 v7 g2 t# j: G3 v, w9 @& s* b6 a
i1 10002 vs dc 5m, u+ s$ I; p0 ]6 k( \
q8 10004 10002 vs ddpnp9 Z9 a4 Q# F3 ]' A* g( U' o
q9 10002 10002 vs ddpnp
7 \% f5 p3 t8 O+ |% r
$ \" d6 {0 m6 _* Sziklai-connected push-pull output stage:
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9 @+ {2 |' s! a1 c$ i4 P pq10 10018 10017 out ddpnp
5 P' m- U, P, a7 J; Fq11 10004 10004 10009 ddnpn 100% a5 B% k$ F: ^# h' ^
q12 10009 10009 10017 ddnpn 100
9 @; g4 R) g/ b' Y4 L% U% A$ A/ oq13 vs 10004 out ddnpn 100
0 ~$ A' p, ~* c. c# r; Tq14 out 10018 gnd ddnpn 100. N) N. m( m. }! p
6 r0 E1 r6 w; T* generic transistor models generated
- F: ^- Q: O3 E6 O$ V* with MicroSim's PARTs utility, using
5 x) U2 G- y9 T1 b* default parameters except Bf:( M q$ A; U5 u. G
; f' S4 E2 |. F.model ddnpn NPN(Is=10f Xti=3 Eg=1.11 Vaf=1003 s, {9 d3 y( P. g) I h
+ Bf=400 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100
3 Z- m( N9 ^2 L6 s/ |+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333( p/ s" ?7 U, x& m5 [/ G
+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n
: V! M( r2 o; u& p5 P) g8 _+ Tf=1n Itf=1 Xtf=0 Vtf=10). X5 [0 k! j2 f1 }0 d2 b9 Y
. F+ @2 w N6 p+ U
.model ddpnp PNP(Is=10f Xti=3 Eg=1.11 Vaf=1002 l/ Q [/ R A0 M! [
+ Bf=200 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=1008 H* z& A3 r$ c8 r0 z. d' z9 r
+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333$ f: e% [+ r9 [! U5 J4 T! P
+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n
; [/ J7 Q+ h O" U+ Tf=1n Itf=1 Xtf=0 Vtf=10)* K( v" D( j, w
5 J" e3 t5 }9 m9 `) i8 ?+ f$ ].ends6 ^& x5 @$ x: N1 A
*----------end of subcircuit model----------- |
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