節錄自 EE Times︰ % T6 ]- k/ a% z$ G$ Q& F: zThe DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency. & S8 S b& a" z! x/ E* ^ 0 w; R+ L- r& w