節錄自 EE Times︰* U& a0 I& I; f" }5 y1 R4 @! b
The DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency. $ N5 c. A, z+ {* ]9 D, @; ~% o3 `# {: U; v& z" d- P