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各位大侠) J4 ]. B/ | ^7 J( f) [
现在碰到一个问题
% h0 l+ r7 ^3 V就是ddr2内存接续的问题
' }! _0 T5 Q0 x+ R' G; p, \& d现在系统cpu是三星的32位的s3c2450(ARM9核心),支持ddr,mobile ddr和ddr2
% I: f ~- n: \6 x0 c The S3C2450 Mobile DRAM Controller supports three kinds of memory inteRFace - (Mobile) SDRAM and mobile
$ ?- K5 l+ q4 L sDDR and DDR2. Mobile DRAM controller provides 2 chip select signals (2 memory banks), these are used for up8 c0 I7 [9 T4 M8 s) V- E0 b) x
to 2 (mobile) SDRAM banks or 2 mobile DDR banks or 2 DDR2 banks. Mobile DRAM controller can’t support 35 [$ C5 ?8 q& Z+ G- F2 m
kinds of memory interface simultaneous, for example one bank for (mobile) SDRAM and one bank for mobile
3 L2 N9 ~# w1 {3 y+ Z( B6 Q9 t9 ?DDR.
9 t6 a/ Q) X5 w0 E0 [9 ?* MDDR2 Features
; i. J4 m) g2 {1 \3 J/ |( X− Support DDR2 having 4-bank architecture, don’t support 8-bank architecture.! u5 b: Q. {6 |7 p
− Support 16-bit external data bus interface9 z9 ? K! B5 n- _# `* n* r9 _
− Support AL(Additive Latency) 0, don’t support posted CAS, it needs EMRS setting.$ X4 l/ E! P2 s
− Don’t support ODT and nDQS function, it needs EMRS setting.
, e: s n5 F, ]0 D b0 F# e$ L− All other features are same to the features of SDR/mDDR$ |4 i5 o( T5 r; L. p6 }& h8 n
& K5 [& I5 ~$ a但是我看他们接续的时候
- c$ i K6 O/ z0 V. U接续了两个ddr2 (32M*16),而内存上只有十六位数据线
K/ k9 _( m+ Q! N于是他们就将两个内存芯片的数据线分为高十六位和低十六位2 g; `1 M, A* J
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我的问题就是: l9 u& Q- q* V3 ]8 A3 n
1,要是接两个内存芯片的话必须这么接么?这么接有什么好处?" S8 a" O# h/ Y* g, p
2,要是接两个芯片的话可不可以将两个芯片的数据线都接续到一起?5 D% D9 m& [4 t- w) g; O9 @! G
3,我现在是用了两个ddr2 (32M*16),但是我要是用一个ddr2 (64M*16)的话这两种方式谁更快一点,原因?6 k* H2 x; i7 T) \1 Y5 e
4,现在内存标称频率还有待于选择,比如说我现在可以用ddr2 667的内存,也可以用ddr2 533的内存,要是都工作在533MHz的话
1 r# q. r& h7 h& p" b5 ` ddr2 667的电磁干扰(EMI)会不会更大一点啊? |
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