Matlab电子电路分析（第三卷）

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Matlab电子电路分析（第三卷）

CHAPTER TEN
SEMICONDUCTOR PHYSICS
% ^% V& i6 U4 H' Z* [% z2 `( SIn this chapter, a brief description of the basic concepts governing the flow of [size=9.96001pt]current in a pn junction are discussed. Both intrinsic and extrinsic semicon
1 U$ P9 Y. ]5 Y9 Aductors are discussed. The characteristics of depletion and diffusion capaci[size=9.96001pt]tance are explored through the use of example problems solved with
1 b9 t' O7 b$ Q/ W2 LMATLAB. The effect of doping concentration on the breakdown voltage of[size=9.96001pt]pn junctions is examined.
10.1 INTRINSIC SEMICONDUCTORS
, ^6 B% N- w1 u9 ^10.1.1 Energy bands
; _, q& w5 h" p7 T8 _! w9 \According to the planetary model of an isolated atom, the nucleus that con[size=9.96001pt]tains protons and neutrons constitutes most of the mass of the atom. Electrons
surround the nucleus in specific orbits. The electrons are negatively charged[size=9.96001pt]and the nucleus is positively charged. If an electron absorbs energy (in the
# h, `$ [2 N! C2 L% j1 Fform of a photon), it moves to orbits further from the nucleus. An electron[size=9.96001pt]transition from a higher energy orbit to a lower energy orbit emits a photon for
a direct band gap semiconductor.
+ U/ T: {8 ^3 g" J: f( C4 q+ ~The energy levels of the outer electrons form energy bands. In insulators, the[size=9.96001pt]lower energy band (valence band) is completely filled and the next energy
* u9 d( U7 M  C9 x$ Uband (conduction band) is completely empty. The valence and conduction[size=9.96001pt]bands are separated by a forbidden energy gap.

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$ Y+ h3 n) w2 t% ~1 }  o( C/ U

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