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Design And Application Guide For High Speed MOSFET Gate Drive Circuits
7 | ?0 f: v! Y, K& wThe main purpose of this paper is to demonstrate a systematic approach to design high peRFormance
) k, f: p8 Z7 L8 l' z& j2 p5 ogate drive circuits for high speed switching applications. It is an informative collection of topics offering t6 M7 U/ q) J9 \' K
a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to% P7 N2 u' ?' h$ c+ i/ _
power electronics engineers at all levels of experience.# H+ u, [4 w% F) ?9 |: G2 c/ b
The most popular circuit solutions and their performance are analyzed, including the effect of parasitic! g s. C7 |; D" f
components, transient and extreme operating conditions. The discussion builds from simple to more
4 g: Z. l5 H' ~1 t3 E pcomplex problems starting with an overview of MOSFET technology and switching operation. Design) W* Y$ W+ f$ c; O" z! i
procedure for ground referenced and high side gate drive circuits, AC coupLED and transformer isolated) m- W9 z' k _3 n8 O( o8 N
solutions are described in great details. A special chapter deals with the gate drive requirements of the
4 n# [5 D( q# J: ^MOSFETs in synchronous rectifier applications.
- l, r& X B# A' Y; Y' ? hSeveral, step-by-step numerical design examples complement the paper.
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发表于 2022-7-25 09:54
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